Ferroelectric Hf 0.5 Zr 0.5 O 2 -gated synaptic transistors with large conductance dynamic range and multilevel states

Benefiting from the nonvolatile and fast programming operations of ferroelectric materials, ferroelectric synaptic transistors (FSTs) are promising in neuromorphic computing. However, it is challenging to realize conductance with a large dynamic range ( G max / G min ) and multilevel states simultaneously under low energy consumption. Here, solution-processed indium oxide (In 2 O 3 ) synaptic transistors gated by ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) are proposed for the first time to address the above problems. Excellent synaptic characteristics were realized through the delicately regulated ferroelectric phase and good inhibition of charge injection in ferroelectric bulk and ferroelectric/semiconductor interface. Long-term potentiation/depression (LTP/D) up to 101 effective conductance states and excellent endurance (>1000 cycles) with large G max / G min = 32.2 were successfully mimicked under a low energy consumption of 490 fJ per spike event. Besides, the simulation achieved 96.5% recognition accuracy of handwriting digit, which is the highest record for existing FSTs. This work provides a new pathway for developing low-cost, high-performance, and energy-efficient FSTs.