Tuned optoelectronic and thermoelectric properties of TIMX2 through M=Ga,In X=S,Se,Te intercalation

I. Ur Rahman, M. Khalid, M. Aamer,F. Ali,M. U. Javed, Q. Rafiq, M. Jawad, T. Raouf Qureshi, M. Irfan,S. Azam

CHALCOGENIDE LETTERS(2023)

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摘要
We presents our analysis on structural electronic and optical properties of TlX and TlMX2 (M =In, Ga; X = Te, Se, S) compound, by first principle density functional theory (DFT).These chalcogenide have a place with a group of the low-dimensionals semiconductors having chains or layered design. They are of critical interested as a result of, their exceptionally anisotropics properties, semiconductivity and photoconductivity, non direct impacts in their IV qualities (counting a district of negatived differentials opposition), exchanging and memories impacts, secondly symphonious opticals age, relaxors conduct and possible application for optoelectronics devices. We reviews the crystals structured of TlMX2 compound, their transports properties below surrounding condition, test and hypothetical investigations of the electronics construction, transports properties and semiconductors metal phased transition below highly tension, and successions of temperature instigated primary phased transition with middle disproportionate state. Electronics natured of the ferroelectrics phased transition in the previously mentione mixes, just as arelaxors conduct, nano domain and conceivable event of quantums specks in dopeds and illuminated precious crystals are examined.
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关键词
optoelectronic properties,thermoelectric properties
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