A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity.Po-Hao Lee,Chia-Fu Lee,Yi-Chun Shih,Hon-Jarn Lin,Yen-An Chang,Cheng-Han Lu,Yu-Lin Chen,Chieh-Pu Lo,Chung-Chieh Chen,Cheng-Hsiung Kuo,Tan-Li Chou,Chia-Yu Wang,J. J. Wu,Roger Wang,Harry Chuang,Yih Wang,Yu-Der Chih,Tsung-Yung Jonathan ChangISSCC（2023）引用 2|浏览40暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
