Structural, Optical, Electric and Magnetic Characteristics of (In 1-x Gd x ) 2 O 3 Films for Optoelectronics.

After (InGdx)O powder with a wide x range of 0 to 10 at.% was chemically produced, (InGdx)O thin films were evaporated under ultra-vacuum using an electron beam apparatus. We investigated the influence of the Gd doping concentration on the magnetic, optical, electrical, and structural properties of the resultant InO deposits. The produced Gd-doped InO films have a cubic InO structure without a secondary phase, as shown by the X-ray diffraction results. Additionally, the chemical analysis revealed that the films are nearly stoichiometric. A three-layer model reproduced the spectroscopic ellipsometer readings to determine the optical parameters and energy gap. The Egopt changed toward the lower wavelength with growing the Gd doping in (InGdx)O films. The Egopt in the (InGd)O films was observed to increase from 3.22 to 3.45 eV when the Gd concentration climbed. Both carrier concentration and hall mobility were found during the Hall effect studies. It was possible to construct the heterojunction of Ni (Al)/n-(InGd)O/p-Si/Al. At voltages between -2 and 2 volts, investigations into the dark (cutting-edge-voltage) characteristics of the produced heterojunctions were made. The oxygen vacancies and cationic defects in the lattice caused by the uncompensated cationic charges resulted in significant magnetism and ferromagnetic behavior in the undoped InO films. The (InGd)O films, however, displayed faint ferromagnetism. The ferromagnetism seen in the (InGd)O films was caused by oxygen vacancies formed during the vacuum film production process. Metal cations created ferromagnetic exchange interactions by snatching free electrons in oxygen.