Radiation Resistance Studies of PIN Diode Detectors Irradiated with Heavy Ions

The controlled destruction of the PIN diode detectors, SIEMENS SFH 870/F170 and SFH 871/F171, by the 35 MeV beam of the C-12 and by 24 MeV of the N-14, respectively, was characterized using nuclear spectroscopy, the surface profile measurements, and the positron annihilation spectroscopy technique. The beam fluence was in the range of 10(12) -10(14) ions/cm(2). It has been shown that the fluence of 10(12) ions/cm(2) of the 12 C beam did not allow it to destroy the PIN diode detector. For this purpose, one needs the fluence of at least 4 x 10(12) ions/cm(2) for the N-14 ions beam and 2.2 x 10(13) ions/cm(2) for the C-12 ions one. The presence of divacancies in the irradiated sample was detected by the positron lifetimes measurements, with the fraction significantly higher for the C-12 implanted sample. Furthermore, it was found that the surface roughness changed drastically following the implantation, i.e., the arithmetic average of profile height deviations from the mean surface of the N-14 beam implanted sample is significantly higher than of that irradiated with the C-12 ions and the reference one, and the surface average roughness was about 2-3 times higher.