Fast-Switching and Low-Loss SOI LIGBT With Recombination Electrode and Double U-Shaped P-Regions

A novel fast-switching low loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed and investigated by simulation. It features a recombination electrode (RE) at anode side and U-shaped P-regions (UP) at the anode and cathode side, respectively (UPRE LIGBT). In a low ON-state anode voltage ( ${V}_{\text {A}}$ ), the anode side UP (UPa) depletes the N-region under the RE to increase the distributed resistance and thus realize snapback free. Meanwhile, the UPa increases the hole injection area to reduce the ON-state voltage drop ( ${V}_{ \mathrm{\scriptscriptstyle ON}}$ ). During the turning off, the depletion region between the UPa and N-region shrinks and provides an electron path to the RE, which accelerates electrons to recombine with holes through the RE and thus decreases ${E}_{ \mathrm{\scriptscriptstyle OFF}}$ . Therefore, the UPRE LIGBT performs a superior tradeoff relationship between ${V}_{ \mathrm{\scriptscriptstyle ON}}$ and ${E}_{ \mathrm{\scriptscriptstyle OFF}}$ . Furthermore, the cathode side UP (UPc) provides a low-resistance hole current path to enhance the latch-up immunity. Consequently, at the same ${E}_{ \mathrm{\scriptscriptstyle OFF}}$ , ${V}_{ \mathrm{\scriptscriptstyle ON}}$ of UPRE LIGBT is 27% and 10% lower than that of separated shorted-anode (SSA) and multisegment anode (MSA) LIGBT, respectively. At the same ${V}_{ \mathrm{\scriptscriptstyle ON}}$ , the UPRE LIGBT reduces ${E}_{ \mathrm{\scriptscriptstyle OFF}}$ by 32% compared with the MSA LIGBT. The UPRE LIGBT improves the short-circuit (SC) withstanding time by 33.8% compared with the one without UPc.