Migration-Enhanced Metal–Organic Chemical Vapor Deposition of Wafer-Scale Fully Coalesced WS₂ and WSe₂ Monolayers

Metal-organic chemical vapor deposition (MOCVD) is widely employed for the wafer-scale synthesis of transition metal dichalcogenide (TMDC) monolayers (MLs). Despite large efforts devoted to understanding the intricate nucleation and lateral growth mechanisms of TMDCs, little attention has been paid to the migration of adatoms on the top of an ML and its influence on parasitic/premature bilayer (BL) nucleation. In this work, using a commercial multi-wafer MOCVD platform, a novel two-stage migration-enhanced MOCVD process is introduced to realize the deposition of wafer-scale fully coalesced tungsten disulfide (WS2) and tungsten diselenide (WSe2) MLs with only sparse BL nucleation in a reasonable deposition time. With the WS2 ML coverage exceeding 99% on 2 in. sapphire substrates within 3 h, BL coverage is suppressed to similar to 15%. Following the same migration enhancement approach, WSe2 MLs are synthesized in 90 min with <20% BL coverage. The migration of W adatoms on the already formed stable WS2 (or WSe2) ML domains is promoted by ramping down the delivery of the tungsten precursor. From the qualitative analysis of the nanomorphology, the migration length of W adatoms is estimated to be <= 100 nm. This approach can be seen as a reliable and solid basis for the development of future large-scale TMDC ML deposition techniques.