Forked-contact and dynamically-doped nanosheets to enhance Si and 2D-material devices at the limit of scaling

•A novel Forked-Contact, Dynamically-Doped Multigate Nanosheet transistor that enables sub-30-nm pitch scaling is proposed.•DFT-NEGF fundamentals and cell layout extrinsics demonstrate a 10 nm scaling boost both for Si and 2D material devices.•The material-specific fundamental gate-length limit for transistor scaling for Si and 2D materials is also assessed here.