PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management

Matthias Moser,Mamta Pradhan,Mohammed Alomari,Michael Heuken,Thomas Schmitt,Ingmar Kallfass,Joachim N. Burghartz

Power Electronic Devices and Components（2023）

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摘要

•Multi-layered dielectrics allow stress engineering and stress-neutral dielectrics.•The two films building up the multi-layer need to have compressive and tensile stress.•Multi-layered dielectrics enhance dielectric soft breakdown field strength.•Multi-layered SiNx/SiNx dielectrics with two layer-pairs show optimum soft breakdown.•PECVD multi-layer stresses are long-term stable under clean-room environment.

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关键词

PECVD,Multi-layer,Dielectric,Power,SiNx,SiOy,GaN-on-Si,Stress

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