Area-selective atomic layer deposition of high-quality Ru thin films by chemo-selective adsorption of short alkylating agents

Jeong-Min Lee,Seo-Hyun Lee, Jieun Oh,Woo-Hee Kim

Materials Letters（2023）

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摘要

•Blocking capability of DEATMS was confirmed against high-quality Ru ALD process.•The effect of surface modification on dielectric/metal surfaces was investigated.•Selective chemisorption of DEATMS inhibitors was confirmed on SiO2 and TiN.•AS-ALD of Ru films was successfully demonstrated on TiN/Si-patterned substrate.

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关键词

Ruthenium,Area-selective atomic layer deposition,Aminosilane inhibitor,Surface modification,Growth retardation

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