Electron spin resonance in P-doped Si nanocrystals/SiC stacked structures with various dot sizes

Teng Sun,Dongke Li,Jiaming Chen,Junnan Han,Ting Zhu,Wei Li,Jun Xu,Kunji Chen

Applied Surface Science（2023）

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摘要

•Si NCs/ SiC multilayers with various dot sizes are fabricated by PECVD system.•The electronic structures of samples are focused on before and after P doping.•Si vacancies are generated in ultra-small Si NCs after P doping.•P-doped Si NCs/SiC multilayers may be applied in spintronics devices.

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关键词

Si nanocrystals,Dot size,Electron spin resonance,g value

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