A 0.31V Vmin Cryogenic SRAM in 14 nm FinFET for Quantum Computing.

Rajiv V. Joshi,John Timmerwilke,Kevin Tien, Mark Yeck,Sudipto Chakraborty

Symposium on VLSI Technology (VLSI Technology)（2022）

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摘要

A fully functional compile-able 4.1Kb 6T SRAM macro in 14nm FinFET technology targeting low-voltage cryogenic operation with a configurable multi-supply boosting capability with VCSmin of 0.23V (room temperature) and 0.31V (6K) is demonstrated.

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关键词

fully functional compileable 6T SRAM macro,cryogenic SRAM,FinFET technology,fully functional compile,quantum computing,multisupply boosting capability,low-voltage cryogenic operation,size 14.0 nm,voltage 0.23 V,voltage 0.31 V,temperature 293.0 K to 298.0 K,storage capacity 4.1 Kbit

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