Origin of Soft Breakdown in Thin-Barrier AlGaN/GaN SBD With C-Doped GaN Buffer
IEEE Transactions on Electron Devices(2023)
摘要
In this work, we investigate the soft breakdown (BD) behavior in thin-barrier (TB) AlGaN/GaN Schottky barrier diode (SBD) with carbon-doped GaN buffer. The soft BD behavior is the result of the coupling of multiple mechanisms. In the off-state, the ionized carbon (C) acceptors make the electric field (
${E}$
-field) crowd at the cathode and cause the impact ionization. Then, the holes generated by impact ionization compensate with the ionized C acceptors, thus suppressing
${E}$
-field crowding and preventing the further avalanche BD. The residual holes flow to and accumulate under the anode, which leads to a continuous increase in the Schottky
${E}$
-field and Schottky leakage, eventually causing the soft BD. Due to the tunneling effect, Schottky leakage is highly sensitive to the Schottky
${E}$
-field in TB structure, so the leakage rise rate during soft BD is abnormally high.
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关键词
AlGaN/GaN,carbon-doped buffer,gated-edge-termination,Schottky barrier diode (SBD),soft breakdown (BD),thin barrier (TB)
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