On-chip AlGaN/GaN HEMTs with the Compatible Normally-off p-GaN Gate and Normally-on MIS Gate Fabrication Processes

In this work, we demonstrate the on-chip normally-off /on AlGaN/GaN HEMTs with the compatible fabrication processes. The normally-off HEMT utilizes a p-GaN gate to deplete the 2DEG channel, while the normally-on device adopts a MIS gate without the p-GaN layer. Supported by the devices fabrication, the normally-off/on devices are realized on one chip with the same processes. A threshold voltage (V TH ) of 2.5V and a drain current (I D ) of 324mA/ mm are obtained in the normally-off p-GaN gate HEMT. And the normally-on MIS gate HEMT shows V TH =−3.3V and I D =408mA/mm. Both of the two devices present the competitive I D -V TH performances compared with the existing works. This feature suggests that the on-chip normally-off/on AlGaN/GaN HEMTs could be a promising candidate for GaN power integrated technologies.