Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits
2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)(2022)
摘要
Experimental results show the response of Global Foundries (GF) 12-nm bulk FinFET digital structures to 10 keV x-ray, $^{60}{\mathrm Co}$ gamma rays, and heavy ions. Among the structures are circuits of 19 scan chains each made up of 15840 digital flip-flops (DFF). Other test structures include digital cells including modified inverters, two input NOR, three input NOR, two input NAND, and three input NAND. Heavy ion sources and 63.6 ${\mathrm rad}({\mathrm SiO}_{2})/{\mathrm s}$ gamma rays were provided by Sandia National Laboratories in Albuquerque, New Mexico. The x-ray source was provided by the SES facility at AFRL in Albuquerque, New Mexico. Single event upset (SEU) cross-sections vs. ion linear energy transfer (LET) for the digital flip-flop chains are extracted. Total ionizing dose (TID) experimental results for both the modified digital cells and DFF circuits are reported.
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关键词
FinFET,total ionizing dose,single event upset,digital flip-flop.
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