Strong quantization of current-carrying electron states in δ-layer systems

Solid-State Electronics(2023)

引用 0|浏览2
暂无评分
摘要
We present an open-system quantum-mechanical real-space study of the conductive properties and size quantization in phosphorus δ-layers systems, interesting for their beyond-Moore and quantum computing applications. Recently it has been demonstrated that an open-system quantum mechanical treatment provides a much more accurate match to ARPES measurements in highly-conductive, highly-confined systems than the traditional approaches (i.e. periodic or Dirichlet boundary conditions) and, furthermore, it allows accurate predictions of conductive properties of such systems from the first principles. Here we reveal that quantization effects are strong for device widths W<10nm, and we show, for the first time, that the number of propagating modes determines not only the conductivity, but the distinctive spatial distribution of the current-carrying electron states. For W>10nm, the quantization effects practically vanish and the conductivity tends to the infinitely-wide device’s values.
更多
查看译文
关键词
Si:P δ-layer systems,Quantum transport,Contact Block Reduction method
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要