Analog Resistance Switching in Single Tungsten Oxide Nanoparticle Devices
2022 IEEE 22ND INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (NANO)(2022)
摘要
Analog resistance switching in single tungsten oxide (WOx) nanoplatelets (NPs) with similar to 100 nm edge length sandwiched in-between a tungsten (W) and a palladium (Pd) electrode is reported. The top contact, individually aligned to each NP, was fabricated using a combination of tailored planarization techniques, nanolithography and sputter deposition. Electrical characterization revealed pronounced analog resistive switching behavior of this material composition, with gradually increasing or decreasing maximum currents for a sequence of positive or negative voltage sweeps, respectively. The switching can be assigned to a formed oxygen vacancy path in the WOx layer. Chemically synthesized NPs with analog switching behavior are promising nanoscale building blocks for the bottom-up formation of 3D memristive structures, which may eventually self-assemble into complex neuromorphic computing circuitry.
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关键词
nanolithography,sputter deposition,analog resistive switching behavior,single tungsten oxide nanoparticle devices,tailored planarization techniques,tungsten electrode,palladium electrode,positive voltage sweeps,negative voltage sweeps,oxygen vacancy path,3D memristive structures,self-assembly,complex neuromorphic computing circuitry,WOx
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