Analysis of SEU effects in MOSFET and FinFET based 6T SRAM Cells

Konstantin O. Petrosyants,Denis S. Silkin,Dmitriy A. Popov,Mamed R. Ismail-Zade

2022 Moscow Workshop on Electronic and Networking Technologies (MWENT)（2022）

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摘要

Comparative modeling of induced charge in FinFET and MOSFET structures is performed. A comparative analysis of the influence of various mechanisms on the occurrence of a current pulse after a particle strike is carried out. The SEE sensitivity of the MOSFET and FinFET based 6T SRAM cells were modeled using TCAD-SPICE mode simulation.

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关键词

FinFET,Single-Event Upset,TCAD.

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