Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO ₂ /ZrO ₂ Superlattice Structure

Abstract The wake‐up phenomenon widely exists in hafnia‐based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at a higher temperature has been reported to be effective in eliminating wake‐up, but high temperature may yield the monoclinic phase or generate more oxygen vacancies. In this work, a unidirectional annealing method is proposed for the crystallization of Hf 0.5 Zr 0.5 O 2 (HZO) superlattice ferroelectrics, which involves heating from the Pt/ZrO 2 interface side. It is demonstrated that 600 °C annealing only leads to a moderate content of monoclinic phase in HZO, and the TiN/HZO/Pt capacitor exhibits wake‐up free nature and a switchable remnant polarization value of 27.4 µC cm −2 . On the other hand, heating from the TiN/HfO 2 side, or using 500 °C annealing temperature, could yield ferroelectric devices that require a wake‐up process. The special configuration of Pt/ZrO 2 is verified by comparative studies with several other superlattice structures and HZO solid‐state solutions. It is discovered that heating from the Pt/HfO 2 side at 600 °C leads to high leakage current and a memristor behavior. The mechanisms of ferroelectric phase stabilization and memristor formation have been discussed. The unidirectional heating method can also be useful for other hafnia‐based ferroelectric devices.