Surface Silicon Bridge Direct Bonded Heterogeneous Integration (s-DBHi)

Kamal Sikka,Isabel De Sousa,Aakrati Jain,Chinami Marushima,Toyohiro Aoki,Sayuri Kohara,Hiroyuki Mori,Takashi Hisada

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)（2022）

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摘要

In a previous study, we have discussed a silicon bridge heterogeneous integration (HI) technology known as DBHi (Direct Bonded Heterogeneous Integration) where processor chips are directly bonded to silicon bridges using copper pillars. The bridge is thicker than the C4s and hence a trench is machined in the substrate to prevent interference. In this study, we eliminate the substrate trench by increasing the height of the C4s and decreasing the thickness of the bridge.

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关键词

Silicon bridge,DBHi,surface bridge,heterogeneous integration)

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