Experimental observations on C-V measurement caused performance degradations in Hf0.5Zr0.5O2 ferroelectric film

In this study, aiming at in-depth understandings on the ferroelectric film degradations caused by the small signal C-V sweeping, TiN/Hf0.5Zr0.5O2/TiN capacitors are systematically characterized by applying various frequencies and AC voltage amplitudes in small signal C-V measurements. It is observed that the degradation has no dependence on AC voltage amplitudes, but it is correlated to the frequency. Smaller degradation can be observed as increasing the frequency. Our results strongly suggest that degradations induced by small signal C-V measurements should be considered for reliability and accurate studies on the ferroelectric films.