Transport Layer Optimization Strategy to Prepare High Efficiency Perovskite Photovoltaic Device

Journal of Physics: Conference Series(2022)

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摘要
Perovskite photovoltaic devices have attracted widespread attention. Despite the spectacular advances in power conversion efficiency (PCE), the unsatisfying stability of the perovskite devices is still a great challenge, which requires a deeper understanding of the device physics, in particular, the interfacial behavior and the junction structure of the perovskite semiconductor devices. Here we demonstrate the continuous decrease of ionic interface charge (IIC) density, weakening of current-voltage hysteresis, decrease of leakage current as well as constant increase of PCE from ~10% to ~19% were achieved through step-by-step modification of the hole transport layer (HTL) and electron transport layer (ETL) of the devices. A new semiconductor device junction device model is presented to understand the correlation between the IIC density and the photovoltaic performance. The work shows that although the IIC is originated from mobile ions in perovskite layer, the IIC density is determined by the properties of the charge transport layer. These conclusions and the proposed device model have important implication for future study in pursuing efficient and stable perovskite photovoltaic devices.
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photovoltaic
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