Epitaxial growth of InGaSb/AlInGaSb THz-QCL structures

2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)(2022)

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摘要
We proposed InGaSb-well-based THz-QCLs to improve laser performance such as the maximum operation temperature. For realization of the InGaSb-well-based THz-QCLs, we performed molecular beam epitaxy (MBE) growth of InGaSb/AlInGaSb layers on a GaSb substrate and succeeded in growing the InGaSb/AlInGaSb QCL structure with a low threading dislocation density.
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关键词
molecular beam epitaxy,epitaxial growth,laser performance,well-based terahertz-QCL,threading dislocation density,InGaSb-AlInGaSb,GaSb
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