Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

•Absence of asymmetry in the noise characteristics of GAA VNW pFETs on SOI substrates.•A clear impact of the nanowire p-type doping density on the noise Power Spectral Density and on the 1/f noise mechanism.•Optimal 1/f noise performance for an intermediate boron doping density around 5 × 1018 cm−3.