The Low-Frequency Noise Behavior of Advanced Logic and Memory Devices

Eddy Simoen,Romain Ritzenthaler,Hans Mertens,Eugenio Dentoni Litta,Naoto Horiguchi, Adrian Vaisman,Nouredine Rassoul,Gouri Sankar Kar,Cor Claeys

2022 China Semiconductor Technology International Conference (CSTIC)（2022）

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摘要

The paper gives an overview of low-frequency (LF) noise studies in advanced logic and memory devices, focusing on two case studies. First, the LF noise of forksheets (FS) transistors is compared with double nanosheets devices fabricated on the same wafer. As will be shown, no degradation of the 1/f noise Power Spectral Density (PSD) is observed. Second, the LF noise of InGaZnO (IGZO) nFETs with different gate dielectric and thin-film materials is investigated. It is demonstrated that the 1/f noise in the above-threshold-voltage range studied is dominated by trapping and detrapping through shallow defects in the IGZO film.

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关键词

IGZO film,1/f noise power spectral density,gate dielectric materials,thin-film materials,double nanosheet devices,forksheet transistors,IGZO nFETs,LF noise,memory devices,advanced logic devices,low-frequency noise behavior,InGaZnO

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