Ion implantation as a new strategy for micro-LED pixelation

InGaN-based blue light-emitting diodes (LEDs), with their high efficiency and brightness, are entering the display industry. However, a significant gap remains between the expectation of highly efficient light sources and their experimental realization into tiny pixels for ultrahigh-density displays for augmented reality (AR). Her, we report using tailored ion implantation (TIIP) to fabricate highly-efficient, electrically-driven pixelated InGaN microLEDs (mu LEDs) at the mid-submicron scale (line/space of 0.5/0.5 mu m. Moreover, we demonstrate high-density TFT and QD C/F integration technologies.