Tungsten CMP Consumable Localization Study at 28NM Technology Node

With the rapid development of semiconductor in China, the localization of semiconductor materials has become a long-term development trend. The main consumables of chemical mechanical planarization (CMP) are pad and slurry, and the tungsten (W) CMP at 28nm node mainly used the imported pad and slurry which fabricated by American corporations. In this paper, the feasibility of replacing the pad and slurry by domestic consumable manufacturers is studied. The process parameters are fine-tuned according to the characteristics of the domestic pad and slurry. Offline remove rate (RR) and profile show comparable performance with baseline by using blanket wafer. Furthermore, the uniformity of film thickness, surface topography, defects, transmission electron microscope (TEM) were studied by using pattern wafer. The experimental results show that the domestic pad and slurry can be applied to W CMP at 28nm node, but the W protrusion control need fine tune by process parameters.