Bias Temperature Instability of Multilayer ReS2 FET with alpha-MoO3 Passivation

2D semiconductors are regarded as promising candidates for channel applications in the next generation of field effect transistors (FETs) with sub-5 nm pitch designs. Among 2D transition metal dichalcogenides (TMDs), rhenium disulfide (ReS2) is reported to have weak interaction among neighboring layers, resulting in more susceptibility to the functionalization of the surface channel. The bias temperature instability (BTI) of ReS2 FETs with alpha-molybdenum trioxide (alpha-MoO3) passivation that functions as a charge buffer layer is investigated. The transconductance (g(m)) with a passivation layer shows the saturation behavior under the critical gate voltage even with cumulative electric stress. In addition, unintentional shifts of threshold voltages (V-TH) are significantly reduced, which is attributed to the effects of the alpha-MoO3 passivation. The electron transfer with the passivation effect suggests a way of surface engineering for controlling the 2D devices with enhanced stabilities.