Investigation of the low contact resistance via alloying of Au/Ni/AuGe-GaAs contact structures

Materials Letters（2022）

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摘要

•TEM investigation of alloying behavior of Au/Ni/AuGe-GaAs contact was conducted.•Ni-As-Ge second phases were formed at metal-GaAs interface by annealing above 350 °C.•Ge doping through the Ni-As-Ge phase on GaAs facilitates electron tunneling.

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关键词

GaAs,Contact resistance,Annealing,Metal contact,Transmission electron microscopy

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