Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and silicon wafers

A. R. Altayar,F. A. Al-Saymari, E. Repiso, L. Hanks,A. P. Craig, M. Bentley,E. Delli,P. J. Carrington,A. Krier,A. R. J. Marshall

Journal of Crystal Growth（2022）

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摘要

•Room temperature mid-infrared electroluminescence on GaAs and Si substrates.•Higher EQE from the Si-based LED due to the superior heat spreading.•Activation energies and Varshni parameters from temperature dependent EL spectra.•Comparison of electroluminescence spectra to band-structure calculations.

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关键词

A3. Molecular Beam Epitaxy,B3. Infrared Devices,B3. Light Emitting Diodes,B2. Semiconducting III-V materials,B1. Antimonides,A3. Quantum wells

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