First demonstration of flexible poly-Si nano-FETs (W/L_g= 50/80 nm) on the polyimide utilizing multi-wavelength laser annealing assisted by laser-buffer layer

Laser-buffer layer (LBL) of SiO 2 /W/SiO 2 facilitates latent-heat dissipation and poly-grains growth by ultraviolet-laser crystallization. CO 2 laser used for dopant activation forms high reflectivity on TiN and LBL to efficiently prevent TiN-gate and PI damage, further reducing S/D resistance with less dopant-diffusion. Employing LBL and multi-wavelength lasers enables directly nano-FET (W/L g = 50/80 nm) fabrication on PI. The first-demonstrated flexible nano-FETs performs S.S of 120 mV/dec. and DIBL of 210 mV/V measured at bending radius of 10 mm.