Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit Device

2021 IEEE International Electron Devices Meeting (IEDM)(2021)

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摘要
We present the first experimental realization of a magnetoelectric spin-orbit (MESO) logic device at room temperature. Two logic states are determined by the magnetization direction of a nanostructured CoFe element, which is switched by a magnetoelectric BiFeO3 layer (WRITE) and detected through spin-to-charge conversion effect in a Pt element (READ).
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关键词
magnetoelectric spin-orbit device,magnetization direction,spin-to-charge conversion effect,magnetoelectric layer,nanostructured element,temperature 293.0 K to 298.0 K,CoFe,Pt,BiFeO3
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