Ultra‐Shallow All‐Epitaxial Aluminum Gate GaAs/Al x Ga 1− x As Transistors with High Electron MobilityYonatan Ashlea Alava,Daisy Q. Wang,Chong Chen,David A. Ritchie,Arne Ludwig,Julian Ritzmann,Andreas D. Wieck,Oleh Klochan,Alexander R. HamiltonAdvanced Functional Materials(2021)引用 1|浏览9暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要