Three-Dimensional Graphene Field Effect Transistors As Self-Powered Vibration Sensors

This paper demonstrates a self-powered vibration sensor based on a three-dimensional (3D) graphene field effect transistor (GFET). A 3D microtubular cantilever structure is adopted to develop the piezoelectricity in single-layer graphene, where the inversion symmetry of the single-layer graphene is broken by the induced strain during the self-rolled-up process. A vibration response current up to 15.9 nA is obtained, with its frequency corresponding to the mechanical vibrational frequency, by applying zero gate and source-drain voltages to the GFET. The self-powered vibration sensor paves a new way to develop the 2D piezoelectric effect of graphene.