Design and development of 1.5 kV vertical GaN pn diodes on HVPE substrate
JOURNAL OF MATERIALS RESEARCH(2021)
摘要
We report the design and development of vertical 1.5 kV GaN p–n diodes that consists of an 8 μm drift layer and a thin p-GaN/p + -GaN layer grown by metal–organic chemical vapor deposition (MOCVD) on a hydride vapor phase epitaxy (HVPE) synthesized GaN substrate. The drift layer has a low doping concentration of ∼9 × 10 15 cm −3 and electron mobility ~ 1200 cm 2 /Vs at room temperature. The fabricated devices with an optimized guard ring design as edge termination exhibit a breakdown voltage of > 1.5 kV with specific on-resistance of ~ 1.5 mΩ cm 2 . The breakdown efficiency of these diodes is over 72% when compared to ideal analytical calculations and over 90% with respect to numerical simulations. Temperature-dependent measurements show that the devices have a positive temperature coefficient suggesting the avalanche breakdown mechanism. These results suggest that these MOCVD grown vertical GaN-on-GaN (HVPE) p–n diodes are promising for low-mid range voltage power switching applications. Graphical abstract
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