Gigahertz Large-Area Electronic Devices and Circuits for Wireless Applications

We highlight recent progress in gigahertz large-area electronic (LAE) devices and circuits. On the device level, this relies on advanced design of zinc-oxide (\textZnO) thin-film transistors (TFTs), for which we consider three key figures of merit, i.e., unity current gain frequency f _T and unity power gain frequency f _MAX of active devices, and unity off-to-on-impedance ratio frequency f _cut-off of passive devices. On the circuit level, this relies on resonant operation and exploiting high-quality-factor LAE inductors. We demonstrate two gigahertz LAE circuits, specifically oscillators and RF switches.