On the asymmetry of the DC and low-frequency noise characteristics of vertical nanowire MOSFETs with bulk source contact

Eddy Simoen,Anabela Veloso,Philippe Matagne

Solid-State Electronics（2022）

引用 7|浏览6

暂无评分

摘要

•First demonstration of impact of the type of source contact on the low-frequency noise characteristics.•First demonstration of a change in dominant 1/f noise mechanism by a different type of source contact.•Better noise and DC performance has been found in R operation.

查看译文

关键词

Vertical nanowires,Gate-all-around,Low-frequency noise,Forward and reverse operation

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要