Variable Turn-OFF Gate Voltage Drive for Voltage Balancing of High-Speed SiC MOSFETs in Series-Connection

IEEE Transactions on Power Electronics(2022)

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摘要
Active gate drive with high accurate and self-adaptive closed-loop control is a promising approach to solving the imbalanced voltage problem of series-connected silicon carbide (SiC) mosfets. However, due to the inherent time propagation mismatching between Si- and SiC-based devices, behavior adjustment through Si-based ICs during the switching transient takes at least tens of nanos...
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关键词
Logic gates,Voltage control,MOSFET,Silicon carbide,Switches,Transient analysis,Resistors
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