Extreme scaling enabled by MX2 transistors: variability challenges (invited)

Quentin Smets,Goutham Arutchelvan,Tom Schram,Devin Verreck,Benjamin Groven,Daire Cott,Zubair Ahmed,Yuanyuan Shi,Surajit Sutar,Ankit Nalin Mehta,Dennis Lin,Inge Asselberghs,Iuliana Radu

2021 Silicon Nanoelectronics Workshop (SNW)（2021）

引用 1|浏览6

暂无评分

摘要

2D materials are promising for logic applications at ultra-scaled channel lengths, but little is known about scaled 2D FET variability. We compare Vt variability in double-gated WS2 FETs and back-gated uncapped MoS 2 FETs and find that the latter have lower Vt variability, competitive with Silicon finFETs. We also investigate SS variability and demonstrate suppression of short-channel effects by scaling the oxide and MoS 2 thickness.

查看译文

关键词

SS variability,short-channel effects,MoS2 thickness,MX2 transistors,logic applications,ultra-scaled channel lengths,scaled 2D FET variability,double-gated WS2 FETs,uncapped MoS2 FETs,MoS2

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要