ASET and TID Characterization of a Radiation Hardened Bandgap Voltage Reference in a 28 nm Bulk CMOS Technology

Analog single-event transient (ASET) and total ionizing dose (TID) characterization of a radiation-hardened bandgap voltage reference (BGR) is investigated in a 28 nm commercial bulk CMOS technology. Different radiation hardened by design (RHBD) techniques are used for ASET mitigation in the circuit and layout, and the circuit is optimized to ensure the BGR can still work correctly even using fast NMOS and slow PMOS for TID mitigation. Heavy-ion (LET = 76.3 MeV∙cm2/mg) experiments show the maximum amplitude of positive (negative) ASET is just 30 mV (90 mV), and Co60 gamma ray experiments show the maximum output voltage reduction is just 37 mV after 1.2 Mrad(Si) irradiation, and the final output voltage reduction is just 11 mV after 48 hours of annealing. All of the experiments indicate that ASET is significantly mitigated by the RHBD techniques, and the BGR has naturally good TID response due to the design margin. The investigation also indicates that the proposed BGR is a good substitute for space application due to the excellent ASET and TID tolerance capability.