Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks

This paper investigates the characterization of charge trapping and its modelling on hafnia-based ferroelectric field effect transistors (FeFETs). Defect characterization on MOSFETs can be done by studying threshold voltage shifts (∆Vth) as a function of charging and relaxation times. At positive gate voltages one expects electron trapping in the gate oxide to result in a positive shift...