Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets

E. Bury,A. Chasin,B. Kaczer, M. Vandemaele,S. Tyaginov,J. Franco,R. Ritzenthaler, H. Mertens,P. Weckx,N. Horiguchi,D. Linten

2022 IEEE International Reliability Physics Symposium (IRPS)（2022）

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摘要

A novel forksheet (FSH) FET architecture has been proposed earlier, consisting of vertically stacked n- and p-type sheets at opposing sides of a dielectric wall, particularly beneficial for logic cell track height scaling. In this paper, we evaluate the reliability concerns of FSH FETs by experimental comparison with nanosheets (NSH) FETs co-integrated on a single wafer. We report no supplementary...

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关键词

Microprocessors,Field effect transistors,Semiconductor device reliability,Computer architecture,Reliability theory,Hot carriers,Dielectrics

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