ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

Wei-Min Wu,Ming-Dou Ker,Shih-Hung Chen,Arturo Sibaja-Hernandez,Sachin Yadav,Uthayasankaran Peralagu,Hao Yu,AliReza Alian,Vamsi Putcha,Bertrand Parvais,Nadine Collaert,Guido Groeseneken

IEEE Transactions on Electron Devices（2022）

引用 6|浏览29

暂无评分

摘要

Gallium nitride (GaN) technologies have become an essential role in commercial advanced RF systems, which accompany emerging RF electrostatic discharge (ESD) reliability challenges. As opposed to ESD clamp transistors in LV CMOS technologies, a mis-correlation between standard-defined human body model (HBM) ESD robustness and commonly used TLP failure current was observed in GaN (MIS) high ...

查看译文

关键词

Transient analysis,Electrostatic discharges,MODFETs,HEMTs,Discharges (electric),Radio frequency,Logic gates

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要