Study of Donor-like Surface Trap Emission in GaNHEMTs

Amirali Chalechale,Majid Shalchian,Farzan Jazaeri

2021 Iranian International Conference on Microelectronics (IICM)（2021）

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摘要

Gate-lag induced trapping effects due to donor-like surface traps located in the access regions between the electrodes of AIGaN/GaN HEMTs are investigated through TCAD transient simulations. The effects of variation in trap energy level and temperature on the current collapse transient characteristics have been studied. A simple physical model is proposed (based on the Arrhenius relation) to obtai...

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关键词

Temperature measurement,Temperature,HEMTs,Logic gates,Mathematical models,Energy states,Wide band gap semiconductors

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