Lifelong Learning with Monolithic 3D Ferroelectric Ternary Content-Addressable Memory

2021 IEEE International Electron Devices Meeting (IEDM)(2021)

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摘要
Lifelong learning at the edge requires on-the-fly learning from scarce data in one or few shots. Here, we present the array-level demonstration of few-shot learning using a first time fabricated monolithic 3D ternary content addressable memory (M3D-TCAM) using back-end-of-line (BEOL) ferroelectric FETs (FeFETs). The fabricated two-tier structure consists of two 10×10 sub-arrays in each tier and al...
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关键词
Performance evaluation,Associative memory,Three-dimensional displays,Hamming distance,Graphics processing units,Voltage,Benchmark testing
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