Quantum plasmonic hot electron injection in the lateral heterostructure of WSe2-MoSe2

Lateral two-dimensional (2D) transitional metal dichalcogenide (TMD) heterostructures have recently attracted a wide attention as promising materials for optoelectronic nano-devices. Due to the nanometer-size width of the lateral heterojunction, the study of its photoemission properties is challenging and requires using subwavelength optical techniques. We investigated the photoresponse of a lateral 2D WSe2-MoSe2 heterostructure using tip-enhanced photoluminescence (TEPL) with sub-nanometer scale variable tip-sample distance. The controllable gold-coated plasmonic silver tip allows for both optical nano-imaging and plasmon-induced hot electron injection into the heterostructure, mediated by the depletion region between the MoSe2 and WSe2. This directionality contributes to the unequal enhancement of the TEPL signals from the MoSe2 and WSe2 sides of the heterojunction. By adjusting the tip-sample distance, we demonstrated the controllability of the hot electron injection rate. In particular, when the tip-sample distance reached the sub-nanometer van der Waals separation, the quantum plasmonic effects facilitated the hot electron injection. The properties of the directional hot electron injection in the quantum plasmonic regime make the lateral 2D MoSe2-WSe2 heterostructures promising for quantum nano-devices with tunable photoresponse.