Transient Overshoot of Sub-10nm Bulk FinFET ESD Diodes with S/D Epitaxy Stressor

Shih-Hung Chen,Dimitri Linten,Geert Hellings,Marko Simicic,Thomas Chiarella,Pierre Eyben,Stefan Kubicek,Erik Rosseel,Andriy Hikavyy,Naoto Horiguchi

2019 41st Annual EOS/ESD Symposium (EOS/ESD)（2019）

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摘要

New process options in CMOS technology scaling often result in degradation of ESD device performance. TCAD simulations bring an in-depth look at the impact of S/D epitaxy process options with channel strain engineering on CDM-time domain turn-on transient overshoot of ESD diodes in next generation bulk FinFET and GAA technologies.

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关键词

transient overshoot,CMOS technology scaling,ESD device performance,TCAD simulations,channel strain engineering,bulk FinFET ESD diodes,S/D epitaxy stressor,CDM-time domain turn-on transient overshoot,GAA technologies,next generation bulk FinFET technology,size 10.0 nm,S

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