Optimization of Ultra-Thin CIGS Based Solar Cells by Adding New Absorber Layers: InGaAs and AlGaAs

In this paper we presented a numerical simulations using SCAPS-1D device model of chalcopyrite (CIG(S,Se)) solar cells. In order to increase the efficiencies of CIGS device, we simulated an alternative ZnO/CdS/CIGS/AlGaAs and ZnO/CdS/CIGS/InGaAs structure. There is an interesting enhancement of the efficiency of CIGS/AlGaAs or /InGaAs and compared to the conventional CIGS solar cells. Our simulation results show the possibility for the present solar cells give conversion efficiency of 28% for CIGS/AlGaAs and 26% for CIGS/InGaAs respectively. The present results showed that the addition of AlGaAs or InGaAs layer thin film CIGS solar cells structure has performance parameters according of Band Gap of CIGS.