Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa) ₂ O ₃ on m-plane sapphire

Science Advances（2021）

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摘要

Crystalline oxides spanning very broad 5.4- to 8.6-eV bandgaps are successfully grown on sapphire by MBE.

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Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa) 2 O 3 on m-plane sapphire