Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization

Eun-Kyeong Jang,Ik-Jyae Kim,Cheon An Lee,Chiweon Yoon,Jang-Sik Lee

IEEE Journal of the Electron Devices Society（2022）

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摘要

In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND because 3D NAND has a confined structure. Thus, the mechanical stress and its influence on the 3D NAND need to be investigated. In this study, we simulated...

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关键词

Stress,Tungsten,Residual stresses,Three-dimensional displays,Flash memories,Solid modeling,Transistors

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